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1. Identificação
Tipo de ReferênciaArtigo em Revista Científica (Journal Article)
Sitemtc-m16b.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador6qtX3pFwXQZGivnK2Y/NmLsH
Repositóriosid.inpe.br/mtc-m17@80/2006/12.04.18.41
Última Atualização2006:12.04.18.41.15 (UTC) administrator
Repositório de Metadadossid.inpe.br/mtc-m17@80/2006/12.04.18.41.16
Última Atualização dos Metadados2018:06.05.03.44.13 (UTC) administrator
Chave SecundáriaINPE-14403-PRE/9489
ISSN0101-7659
Chave de CitaçãoNogueiraSilvTanFurl:2006:PrHiHy
TítuloProduction of Highly Hydrophobic Films using Low Frequency and High Density Plasma
Ano2006
Data de Acesso21 maio 2024
Tipo SecundárioPRE PN
Número de Arquivos1
Tamanho436 KiB
2. Contextualização
Autor1 Nogueira, S.
2 Silva, M. L. P.
3 Tan, Ing Hwie
4 Furlan, R.
Identificador de Curriculo1
2
3 8JMKD3MGP5W/3C9JHDC
Grupo1
2
3 LAP-INPE-MCT-BR
Afiliação1 Escola Politécnica, Universidade de São Paulo
2 Faculdade de Tecnologia de São Paulo, CEETEPS, UNESP
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Department of Physics and Electronics, University of Puerto Rico at Humacao
RevistaRevista Brasileira de Aplicações de Vácuo
Volume25
Número1
Páginas45-53
Histórico (UTC)2006-12-04 18:42:35 :: simone -> administrator ::
2012-11-24 01:39:27 :: administrator -> simone :: 2006
2013-02-20 15:19:53 :: simone -> administrator :: 2006
2018-06-05 03:44:13 :: administrator -> marciana :: 2006
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
Palavras-ChaveHD plasma
low frequency plasma
HMDS
plasma polymerization
ResumoHexamethyldisilazane was plasma polymerised on silicon wafers and on glass and quartz substrates, in order to obtain films with high concentration of CH3 radicals. Two plasma reactors were used: a capacitive 40 kHz reactor and an inductive 13.56 MHz reactor. Very high deposition rates (up to 700nm/min), evaluated by profilometry, were obtained using the low frequency capacitive reactor, with much lower rates obtained at 13.56 MHz (capacitive and inductive coupling). The refractive indexes, measured by ellypsometry, were close to 1.6 (40 kHz capacitive reactor), and near 1.5 (13.56 MHz inductive reactor). Infrared analysis showed Si-CH3 and mainly Si-N-Si -Si or Si-CH2 bonds for the low frequency and inductively coupled reactors, respectively. Addition of nitrogen to the plasma did not lead to variations in the infrared spectra, but increased the chemical resistance of the film, probably due to cross-linking. Addition of oxygen resulted in the decrease of Si-N-Si bonds compared to Si-CH2-Si and loss of Si-CH3. in both reactors. The oxygen addition also did not improve chemical resistance and prevented the adhesion of photoresists to glass. Raman spectroscopy revealed the presence of CHn bonds only. Contact angle measurements showed that these films are highly hydrophobic, and have high affinity to organic solvents, both polar and non-polar. They also have good chemical resistance to strong acid and basic solutions. The films were tested for the following applications: as an adhesion promoter of photoresists on glass substrates, as a defrosting protective layer, as an ultraviolet radiation protective layer, and as an adsorption coating in microstructures, using silicon or porous silicon as substrates. In all applications, the films obtained with hexamethyldisilazane in the low frequency reactor presented better results than the ones obtained with the inductive reactor.
ÁreaFISPLASMA
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4. Condições de acesso e uso
URL dos dadoshttp://urlib.net/ibi/6qtX3pFwXQZGivnK2Y/NmLsH
URL dos dados zipadoshttp://urlib.net/zip/6qtX3pFwXQZGivnK2Y/NmLsH
Idiomapt
Arquivo AlvoProduction of highly hydrophobic.pdf
Grupo de Usuáriosadministrator
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5. Fontes relacionadas
Unidades Imediatamente Superiores8JMKD3MGPCW/3ET2RFS
Lista de Itens Citandosid.inpe.br/mtc-m21/2012/07.13.14.50.16 2
sid.inpe.br/bibdigital/2013/09.25.21.49 1
DivulgaçãoPORTALCAPES
Acervo Hospedeirolcp.inpe.br/ignes/2004/02.12.18.39
cptec.inpe.br/walmeida/2003/04.25.17.12
6. Notas
Campos Vaziosalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository month nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Controle da descrição
e-Mail (login)marciana
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